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AEM

CWDM3011P

11A,30V Surface mount MOSFET P-Channel Enhancement Mode High Current

Specifications

Case Type
SOIC-8
Common Source Input Capacitance (Ciss)
3100 pF
Common Source Output Capacitance (Coss)
320 pF
Common Source Reverse Transfer Capacitance (Crss)
450 pF
Continuous Drain Current
11 A
Diode Forward On Voltage (VSD)
1.3 V
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 3 V(1.4 V Typical)
Gate-Drain Charge (Qgd)
10.1 nC
Gate-Source Charge (Qgs)
7 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
50 A
Power Dissipation
2.5 W
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.02 Ω
Static Drain-Source On Resistance (rDS(ON))
0.03 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
50 °C/W
Total Gate Charge (Qg)
80 nC
Turn Off Time (toff)
330 ns
Turn On Time (ton)
49 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Special Order Item11A,30V Surface mount MOSFET P-Channel Enhancement Mode High CurrentBox350PBFREE
Special Order Item11A,30V Surface mount MOSFET P-Channel Enhancement Mode High CurrentTape & Reel2,500TINNo

Resources

ItemType
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:Lead frameAnalytical Test Report
Analytical Test Report:WireAnalytical Test Report
CWDM3011P.PDFDevice Datasheet
Material Composition:SOIC-8Material Composition
Package Detail Document:SOIC-8Package Detail Document
Process Change Notice:CP775 -> CP802Process Change Notice
Process Change Notice:SOIC-8 CASEProcess Change Notice
Product Reliability Data:SOIC-8 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model CWDM3011PSpice Model

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