CWDM609P8N
13A,60V Surface mount MOSFET N-Channel Enhancement Mode High Current
Specifications
Case Type
SOIC-8
Continuous Drain Current
9.8 A
Continuous Drain Current
13 A
Diode Forward On Voltage (VSD)
1.6 V
Drain-Source Breakdown Voltage (BVDSS)
60 V
Drain-Source Voltage
60 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4.1 V(2.82 V Typical)
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-55 — 150 °C
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.014 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
50 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Special Order Item | 13A,60V Surface mount MOSFET N-Channel Enhancement Mode High Current | Box | 350 | PBFREE | |
| Special Order Item | 13A,60V Surface mount MOSFET N-Channel Enhancement Mode High Current | Tape & Reel | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Lead frame | Analytical Test Report |
| Analytical Test Report:Wire | Analytical Test Report |
| IDS02512.PDF | Device Datasheet |
| Material Composition:SOIC-8 | Material Composition |
| Package Detail Document:SOIC-8 | Package Detail Document |
| Product Reliability Data:SOIC-8 Package Reliability | Product Reliability Data |