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AEM

CXDM1002N

2A,100V Surface mount MOSFET N-Channel Enhancement Mode High Current

Specifications

Case Type
SOT-89
Common Source Input Capacitance (Ciss)
550 pF
Common Source Output Capacitance (Coss)
45 pF
Common Source Reverse Transfer Capacitance (Crss)
48 pF
Continuous Drain Current
2 A
Diode Forward On Voltage (VSD)
1.1 V
Drain-Source Breakdown Voltage (BVDSS)
100 V
Drain-Source Voltage
100 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
15000 nA
Gate Leakage Current, Reverse (IGSSR)
15000 nA
Gate Threshold Voltage (VGS(th))
1.5 — 2.5 V(2.1 V Typical)
Gate-Drain Charge (Qgd)
3 nC
Gate-Source Charge (Qgs)
1.2 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
7 A
Power Dissipation
1.2 W
Saturation Drain Current (IDSS)
0.1 µA
Static Drain-Source On Resistance (rDS(ON))
0.3 Ω
Static Drain-Source On Resistance (rDS(ON))
0.35 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
104 °C/W
Total Gate Charge (Qg)
6 nC
Turn Off Time (toff)
50 ns
Turn On Time (ton)
32 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued2A,100V Surface mount MOSFET N-Channel Enhancement Mode High CurrentBox900PBFREE
Discontinued2A,100V Surface mount MOSFET N-Channel Enhancement Mode High CurrentTape & Reel1,000TINNo

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