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AEM

CXDM3069N

6.9A,30V Surface mount MOSFET N-Channel Enhancement Mode High Current

Specifications

Case Type
SOT-89
Common Source Input Capacitance (Ciss)
580 pF
Common Source Output Capacitance (Coss)
42 pF
Common Source Reverse Transfer Capacitance (Crss)
47 pF
Continuous Drain Current
6.9 A
Drain-Source Breakdown Voltage (BVDSS)
30 V
Drain-Source Voltage
30 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
0.7 — 1.4 V(0.9 V Typical)
Gate-Drain Charge (Qgd)
1.2 nC
Gate-Source Charge (Qgs)
1 nC
Gate-Source Voltage (VGS)
12 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
40 A
Power Dissipation
1.2 W
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.035 Ω
Static Drain-Source On Resistance (rDS(ON))
0.03 Ω
Static Drain-Source On Resistance (rDS(ON))
0.05 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
104 °C/W
Total Gate Charge (Qg)
11 nC
Turn Off Time (toff)
28 ns
Turn On Time (ton)
20 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued6.9A,30V Surface mount MOSFET N-Channel Enhancement Mode High CurrentBox900PBFREE
Discontinued6.9A,30V Surface mount MOSFET N-Channel Enhancement Mode High CurrentTape & Reel1,000TINNo

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