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AEM

CXDM4060P

6A,40V Surface mount MOSFET P-Channel Enhancement Mode High Current

Specifications

Case Type
SOT-89
Common Source Input Capacitance (Ciss)
1273 pF
Common Source Output Capacitance (Coss)
100.5 pF
Common Source Reverse Transfer Capacitance (Crss)
83.1 pF
Continuous Drain Current
6 A
Diode Forward On Voltage (VSD)
1.5 V
Drain-Source Breakdown Voltage (BVDSS)
40 V
Drain-Source Voltage
40 V
ECCN Code
EAR99
Fall Time (tf)
10.7 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 3 V(2 V Typical)
Gate-Drain Charge (Qgd)
6.3 nC
Gate-Source Charge (Qgs)
2.7 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
20 A
Power Dissipation
1.2 W
Rise Time (tr)
5.2 ns
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.065 Ω
Static Drain-Source On Resistance (rDS(ON))
0.095 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
104 °C/W
Total Gate Charge (Qg)
16 nC
Turn Off Time (toff)
55.7 ns
Turn On Time (ton)
13.1 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued6A,40V Surface mount MOSFET P-Channel Enhancement Mode High CurrentBox900PBFREE

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