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AEM

CXDM6053N

5.3A,60V Surface mount MOSFET N-Channel Enhancement Mode High Current

Specifications

Case Type
SOT-89
Common Source Input Capacitance (Ciss)
920 pF
Common Source Output Capacitance (Coss)
49 pF
Common Source Reverse Transfer Capacitance (Crss)
53 pF
Continuous Drain Current
5.3 A
Diode Forward On Voltage (VSD)
1.2 V
Drain-Source Breakdown Voltage (BVDSS)
60 V
Drain-Source Voltage
60 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 3 V(1.3 V Typical)
Gate-Drain Charge (Qgd)
3.6 nC
Gate-Source Charge (Qgs)
1.9 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
30 A
Power Dissipation
1.2 W
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.041 Ω
Static Drain-Source On Resistance (rDS(ON))
0.052 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
104 °C/W
Total Gate Charge (Qg)
8.8 nC
Turn Off Time (toff)
42 ns
Turn On Time (ton)
33 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued5.3A,60V Surface mount MOSFET N-Channel Enhancement Mode High CurrentTape & Reel1,000TINNo

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