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AEM

CXT3150

25V,5A,1.2W Surface mount Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.4 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
SOT-89
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
25 V
Continuous Base Current
1 A
Continuous Collector Current
5 A
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
250 — 550 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
50 pF
Power Dissipation
1.2 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
104 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active25V,5A,1.2W Surface mount Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/SwitchBox900PBFREE
Active25V,5A,1.2W Surface mount Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/SwitchTape & Reel1,000TINNo

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