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AEM

CXT591E

60V,1A,1.2W Surface mount Transistor-Small Signal (<=1A) PNP High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
SOT-89
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
200 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
200 — 600 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
200 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current
2 A
Power Dissipation
1.2 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
104 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued60V,1A,1.2W Surface mount Transistor-Small Signal (<=1A) PNP High CurrentTape & Reel1,000PBFREE

Resources

ItemType
Analytical Test Report:Green Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:Halogen Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
CXT591E.PDFDevice Datasheet
Material Composition:SOT-89Material Composition
Package Detail Document:SOT-89Package Detail Document
Process Change Notice:Copper Wire Bonding - SOT-89Process Change Notice
Product EOL Notice:All Devices in the SOT-89Product EOL Notice
Product Reliability Data:SOT-89 Package ReliabilityProduct Reliability Data

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