CZDM0407P
7.63A,40V Surface mount MOSFET P-Channel Enhancement Mode
Specifications
Case Type
SOT-223
Continuous Drain Current
7.63 A
Diode Forward On Voltage (VSD)
1.5 V
Drain-Source Breakdown Voltage (BVDSS)
40 V
Drain-Source Voltage
40 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
1 — 2.5 V(1.6 V Typical)
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
29.01 A
Power Dissipation
1.15 W
Power Dissipation
1.92 W
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.035 Ω
Static Drain-Source On Resistance (rDS(ON))
0.045 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
65 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 7.63A,40V Surface mount MOSFET P-Channel Enhancement Mode | Box | 350 | PBFREE | |
| Discontinued | 7.63A,40V Surface mount MOSFET P-Channel Enhancement Mode | Tape & Reel | 1,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Lead frame | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CZDM0407P.PDF | Device Datasheet |
| Material Composition:SOT-223 | Material Composition |
| Package Detail Document:SOT-223 | Package Detail Document |
| Process Change Notice:Copper Wire Bonding - SOT-223 | Process Change Notice |
| Product EOL Notice:All devices in SOT-223 Case | Product EOL Notice |
| Product Reliability Data:SOT-223 Package Reliability | Product Reliability Data |
| Step File 3D Object:SOT-223 | Step File 3D Object |