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AEM

CZDM1003N

3A,100V Surface mount MOSFET N-Channel Enhancement Mode High Current

Specifications

Case Type
SOT-223
Common Source Input Capacitance (Ciss)
975 pF
Common Source Output Capacitance (Coss)
80 pF
Common Source Reverse Transfer Capacitance (Crss)
70 pF
Continuous Drain Current
3 A
Diode Forward On Voltage (VSD)
1.3 V
Drain-Source Breakdown Voltage (BVDSS)
100 V
Drain-Source Voltage
100 V
ECCN Code
EAR99
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V
Gate-Drain Charge (Qgd)
5.5 nC
Gate-Source Charge (Qgs)
3 nC
Gate-Source Voltage (VGS)
20 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
12 A
Power Dissipation
2 W
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
0.15 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
62.5 °C/W
Total Gate Charge (Qg)
15 nC
Turn Off Time (toff)
155 ns
Turn On Time (ton)
80 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued3A,100V Surface mount MOSFET N-Channel Enhancement Mode High CurrentBox350PBFREE
Discontinued3A,100V Surface mount MOSFET N-Channel Enhancement Mode High CurrentTape & Reel1,000PBFREE

Resources

ItemType
Analytical Test Report:Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:Lead frameAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
CZDM1003N.PDFDevice Datasheet
Material Composition:SOT-223Material Composition
Package Detail Document:SOT-223Package Detail Document
Process Change Notice:Copper Wire Bonding - SOT-223Process Change Notice
Product EOL Notice:CZDM1003NProduct EOL Notice
Product Reliability Data:SOT-223 Package ReliabilityProduct Reliability Data
Step File 3D Object:SOT-223Step File 3D Object

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