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AEM

CZDM8502N

2A,850V Surface mount MOSFET N-Channel Enhancement Mode

Specifications

Body Diode Reverse Recovery (trr)
361 ns
Body Diode Stored Charge (Qrr)
1.2 µC
Case Type
SOT-223
Common Source Input Capacitance (Ciss)
383 pF
Common Source Output Capacitance (Coss)
39 pF
Common Source Reverse Transfer Capacitance (Crss)
1.6 pF
Continuous Drain Current
1.2 A
Continuous Drain Current
2 A
Diode Forward On Voltage (VSD)
1.4 V
Drain-Source Breakdown Voltage (BVDSS)
850 V
Drain-Source Voltage
850 V
ECCN Code
EAR99
Fall Time (tf)
27 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V
Gate-Drain Charge (Qgd)
4.6 nC
Gate-Source Charge (Qgs)
2.3 nC
Gate-Source Voltage (VGS)
30 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
8 A
Rise Time (tr)
23 ns
Saturation Drain Current (IDSS)
1 µA
Single Pulse Avalanche Energy
180 mJ
Static Drain-Source On Resistance (rDS(ON))
6.3 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
9.7 nC
Turn-off Delay Time (tOFF)
26 ns
Turn-on Delay Time (tON)
13 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued2A,850V Surface mount MOSFET N-Channel Enhancement ModeBox350PBFREE
Discontinued2A,850V Surface mount MOSFET N-Channel Enhancement ModeTape & Reel1,000PBFREE

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