CZT122
5A,100V Surface mount Transistor-Bipolar Power (>1A) NPN Darlington
Specifications
Base-Emitter On Voltage (VBE(ON))
2.5 V
Case Type
SOT-223
Collector-Base Cutoff Current (ICBO)
200000 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
4000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
120 mA
Continuous Collector Current
5 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
1000 x10³
DC Current Gain (hFE)
1000 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
200 pF
Peak Collector Current
8 A
Power Dissipation
2 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
62.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 5A,100V Surface mount Transistor-Bipolar Power (>1A) NPN Darlington | Box | 350 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Lead frame | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| CZT122&27.PDF | Device Datasheet |
| Material Composition:SOT-223 | Material Composition |
| Package Detail Document:SOT-223 | Package Detail Document |
| Process Change Notice:Copper Wire Bonding - SOT-223 | Process Change Notice |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:SOT-223 Package Reliability | Product Reliability Data |
| Step File 3D Object:SOT-223 | Step File 3D Object |