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AEM

CZT2222A

40V,600mA,2W Surface mount Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 1.2 V
Case Type
SOT-223
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Time Constant (rb'Cc)
150 ps
Collector-Base Voltage
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
0.01 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
50 x10³
Delay Time (td)
10 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
60 ns
HTS Code
8541.29.0065
Input Capacitance (Cib)
25 pF
Input Impedance Common Emitter (hie)
0.25 — 1.25 kΩ
Input Impedance Common Emitter (hie)
2 — 8 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
4 dB
Output Admittance Common Emitter (hoe)
25 — 200 µS
Output Admittance Common Emitter (hoe)
5 — 35 µS
Output Capacitance (Cob)
8 pF
Power Dissipation
2 W
Rise Time (tr)
25 ns
Small Signal Current Gain (hfe)
75 — 375 x10³
Small Signal Current Gain (hfe)
50 — 300 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
225 ns
Thermal Resistance Junction-Ambient
62.5 °C/W
Voltage Feedback Ratio Common Emitter (hre)
0.4 x10⁻³
Voltage Feedback Ratio Common Emitter (hre)
0.8 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active40V,600mA,2W Surface mount Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox350TINNo

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