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AEM

CZT2680

200V,1.5A,2W Surface mount Transistor-Bipolar Power (>1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
SOT-223
Collector-Base Breakdown Voltage (BVCBO)
250 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
250 V
Collector-Emitter Breakdown Voltage (BVCEO)
200 V
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
200 V
Continuous Collector Current
1.5 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
30 pF
Peak Collector Current
2 A
Power Dissipation
2 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
62.5 °C/W
Turn Off Time (toff)
1000 ns
Turn On Time (ton)
300 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active200V,1.5A,2W Surface mount Transistor-Bipolar Power (>1A) NPN High VoltageBox350PBFREE

Resources

ItemType
Analytical Test Report:Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:Lead frameAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
CZT2680.PDFDevice Datasheet
Material Composition:SOT-223Material Composition
Package Detail Document:SOT-223Package Detail Document
Process Change Notice:Copper Wire Bonding - SOT-223Process Change Notice
Product EOL Notice:All devices in SOT-223 CaseProduct EOL Notice
Product Reliability Data:SOT-223 Package ReliabilityProduct Reliability Data
Spice Model:Spice Model CZT2680Spice Model
Step File 3D Object:SOT-223Step File 3D Object

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