Skip to main content
AEM

CZT3019

80V,1A,2W Surface mount Transistor-Small Signal (<=1A) NPN High Current

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
SOT-223
Collector-Base Breakdown Voltage (BVCBO)
140 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
140 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
100 — 400 MHz
DC Current Gain (hFE)
90 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
15 x10³
DC Current Gain (hFE)
50 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0065
Input Capacitance (Cib)
60 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
4 dB
Output Capacitance (Cob)
12 pF
Peak Collector Current
1.5 A
Power Dissipation
2 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
62.5 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active80V,1A,2W Surface mount Transistor-Small Signal (<=1A) NPN High CurrentBox350TINNo
Active80V,1A,2W Surface mount Transistor-Small Signal (<=1A) NPN High CurrentTape & Reel1,000TINNo

Resources

Recently Viewed