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AEM

CZT5338

100V,5A,2W Surface mount Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
SOT-223
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
1 A
Continuous Collector Current
5 A
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
30 — 120 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
30 x10³
Delay Time (td)
100 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
6 V
Fall Time (tf)
200 ns
HTS Code
8541.29.0065
Input Capacitance (Cib)
1000 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
250 pF
Power Dissipation
2 W
Rise Time (tr)
100 ns
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
2000 ns
Thermal Resistance Junction-Ambient
62.5 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active100V,5A,2W Surface mount Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/SwitchBox350PBFREE

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