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AEM

CZT5401

150V,600mA,2W Surface mount Transistor-Small Signal (<=1A) PNP High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
SOT-223
Collector-Base Breakdown Voltage (BVCBO)
160 V
Collector-Base Cutoff Current (ICBO)
50000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
160 V
Collector-Emitter Breakdown Voltage (BVCEO)
150 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
150 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
100 — 300 MHz
DC Current Gain (hFE)
60 — 240 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
50 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
8 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
2 W
Small Signal Current Gain (hfe)
40 — 200 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
62.5 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active150V,600mA,2W Surface mount Transistor-Small Signal (<=1A) PNP High VoltageBox350TINNo
Active150V,600mA,2W Surface mount Transistor-Small Signal (<=1A) PNP High VoltageTape & Reel1,000TINNo

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