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AEM

CZT853

100V,6A,3W Surface mount Transistor-Bipolar Power (>1A) NPN Low VCE(SAT)

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.25 V
Case Type
SOT-223
Collector-Base Breakdown Voltage (BVCBO)
200 V
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
200 V
Collector-Emitter Breakdown Voltage (BVCER)
200 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICER)
0.01 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
340 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
50 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
170 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Collector Current
6 A
Current Gain-Bandwidth Product (fT)
190 MHz
DC Current Gain (hFE)
100 — 300 x10³(200 x10³ Typical)
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
6 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
38 pF
Power Dissipation
3 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
41.7 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active100V,6A,3W Surface mount Transistor-Bipolar Power (>1A) NPN Low VCE(SAT)Box350PBFREE
Active100V,6A,3W Surface mount Transistor-Bipolar Power (>1A) NPN Low VCE(SAT)Tape & Reel1,000TINNo

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