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AEM

CZT955

140V,4A,3W Surface mount Transistor-Bipolar Power (>1A) PNP Low VCE(SAT)

Specifications

Base-Emitter On Voltage (VBE(ON))
0.93 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.04 V
Case Type
SOT-223
Collector-Base Breakdown Voltage (BVCBO)
180 V
Collector-Base Cutoff Current (ICBO)
500 nA
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Voltage
180 V
Collector-Emitter Breakdown Voltage (BVCER)
180 V
Collector-Emitter Breakdown Voltage (BVCEO)
140 V
Collector-Emitter Cutoff Current (ICER)
0.02 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
360 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
60 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
80 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
120 mV
Collector-Emitter Voltage (VCEO)
140 V
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
100 — 300 x10³(220 x10³ Typical)
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
7 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
33 pF
Peak Collector Current
10 A
Power Dissipation
3 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
41.7 °C/W
Turn Off Time (toff)
410 ns
Turn On Time (ton)
25 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued140V,4A,3W Surface mount Transistor-Bipolar Power (>1A) PNP Low VCE(SAT)Box350PBFREE

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