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AEM

D40C4

500mA,40V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Case Type
TO-202
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICES)
0.5 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
40 V
Collector-Emitter Voltage (VCES)
40 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
80 MHz
DC Current Gain (hFE)
10 — 70 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
13 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current
1 A
Power Dissipation
6.25 W
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Case
20 °C/W
Turn Off Time (toff)
1200 ns
Turn On Time (ton)
120 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued500mA,40V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonSleeve50PBFREE

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