D40K1
2A,30V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
2.5 V
Case Type
TO-202
Collector-Base Capacitance (Ccb)
10 pF
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Cutoff Current (ICES)
0.5 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
30 V
Collector-Emitter Voltage (VCES)
30 V
Continuous Base Current
200 mA
Continuous Collector Current
2 A
Current Gain-Bandwidth Product (fT)
75 MHz
DC Current Gain (hFE)
1 x10³
DC Current Gain (hFE)
10 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
13 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
3 A
Power Dissipation
10 W
Power Dissipation
1.67 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
75 °C/W
Thermal Resistance Junction-Case
12.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 2A,30V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Lead Frame | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| D40K_SERIES.PDF | Device Datasheet |
| Material Composition:TO-202 | Material Composition |
| Package Detail Document:TO-202 | Package Detail Document |
| Product EOL Notice:All Product in the TO-202 and | Product EOL Notice |
| Product Reliability Data:TO-202 Package Reliability | Product Reliability Data |