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AEM

D41D1

30V,1A,6.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-202
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Cutoff Current (ICES)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
30 V
Collector-Emitter Voltage (VCES)
45 V
Continuous Collector Current
1 A
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
50 — 150 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
1.5 A
Power Dissipation
6.25 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
20 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued30V,1A,6.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchSleeve50PBFREE

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