D44C11
80V,4A,30W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-220
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
80 V
Collector-Emitter Voltage (VCES)
90 V
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
100 — 220 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
5 V
Fall Time (tf)
75 ns
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
100 pF
Peak Collector Current
6 A
Power Dissipation
30 W
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
500 ns
Thermal Resistance Junction-Ambient
75 °C/W
Thermal Resistance Junction-Case
4.2 °C/W
Turn On Time (ton)
100 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 80V,4A,30W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| D44C_SERIES.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:D44C11 and D44H11 | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |