D44E3
10A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
2.5 V
Case Type
TO-220
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICES)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCEO)
80 V
Collector-Emitter Voltage (VCES)
80 V
Continuous Base Current
1 A
Continuous Collector Current
10 A
DC Current Gain (hFE)
1000 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
200 pF
Power Dissipation
80 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
1.56 °C/W
Turn Off Time (toff)
2500 ns
Turn On Time (ton)
1000 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 10A,80V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| D44E1_SERIES.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |