D45H11
80V,10A,1.67W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
0.54 — 0.64 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-220
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current
10 A
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
60 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Peak Collector Current
20 A
Power Dissipation
50 W
Power Dissipation
1.67 W
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
75 °C/W
Thermal Resistance Junction-Case
2.5 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued, Stock Only | 80V,10A,1.67W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | Sleeve | 50 | PBFREE | |
| Discontinued, Stock Only | 80V,10A,1.67W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| LSSGP093.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |