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GES6016

60V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
0.55 — 0.75 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 — 1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 0.88 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
70 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
70 V
Collector-Emitter Breakdown Voltage (BVCES)
70 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Voltage (VCEO)
60 V
Collector-Emitter Voltage (VCES)
70 V
Continuous Collector Current
800 mA
Current Gain-Bandwidth Product (fT)
135 — 425 MHz
DC Current Gain (hFE)
200 — 500 x10³
DC Current Gain (hFE)
170 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
70 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
20 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
45 pF
Input Impedance Common Emitter (hie)
2.5 — 20 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
3 dB
Output Admittance Common Emitter (hoe)
170 µS
Output Capacitance (Cob)
10 pF
Peak Collector Current
1.5 A
Power Dissipation
1 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
130 — 750 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
400 ns
Turn On Time (ton)
37 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active60V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High CurrentBox2,500LEAD or TINNo

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