Skip to main content
AEM
No image available

J201

.3V,1.5V,50mA,350mW Through-Hole JFET N Channel

Specifications

Case Type
TO-92
Common Source Input Capacitance (Ciss)
5 pF
Common Source Reverse Transfer Capacitance (Crss)
2 pF
Continuous Gate Current
50 mA
Drain-Gate Voltage
40 V
ECCN Code
EAR99
Forward Transadmittance (gfs)
0.5 mS
Gate Leakage Current (IGSS)
1 nA
Gate-Source Breakdown Voltage (BVGSS)
42 V
Gate-Source Cutoff Voltage (VGS(OFF))
0.3 — 1.5 V
Gate-Source Voltage (VGS)
40 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
350 mW
Saturation Drain Current (IDSS)
200 — 1000 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
357 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active.3V,1.5V,50mA,350mW Through-Hole JFET N ChannelBox2,500PBFREE

Resources

Recently Viewed