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J211
2.5V,4.5V,10mA,625mW Through-Hole JFET N Channel
Specifications
Case Type
TO-92
Continuous Gate Current
10 mA
Drain-Gate Voltage
25 V
ECCN Code
EAR99
Gate Leakage Current (IGSS)
0.1 nA
Gate-Source Breakdown Voltage (BVGSS)
25 V
Gate-Source Cutoff Voltage (VGS(OFF))
2.5 — 4.5 V
Gate-Source Voltage (VGS)
25 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-55 — 150 °C
Power Dissipation
625 mW
Saturation Drain Current (IDSS)
7000 — 20000 µA
Storage Temperature (Tstg)
-55 — 150 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 2.5V,4.5V,10mA,625mW Through-Hole JFET N Channel | Box | 2,500 | PBFREE | |
| Active | 2.5V,4.5V,10mA,625mW Through-Hole JFET N Channel | Ammo | 2,000 | PBFREE | |
| Active | 2.5V,4.5V,10mA,625mW Through-Hole JFET N Channel | Ammo | 2,000 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Copper Wire | Analytical Test Report |
| Analytical Test Report:Epoxy Adhesive | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead Frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| IDS02552.PDF | Device Datasheet |
| Material Composition:TO-92 | Material Composition |
| Package Detail Document:TO-92 | Package Detail Document |
| Product Reliability Data:TO-92 Package Reliability | Product Reliability Data |