MD2369B
15V,500mA,550mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch
Specifications
B-E Voltage Differential Change Due To Temperature (Δ(VBE1-VBE2))
20 µV/°C
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
10 mV
Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 0.85 V
Case Type
TO-78
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
30000 nA
Collector-Base Cutoff Current (ICBO)
30 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
500 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
40 — 140 x10³
DC Current Gain Matching (hFE1/hFE2)
0.8 — 1
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
4 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
4 pF
Power Dissipation
600 mW
Power Dissipation
1.4 W
Power Dissipation
2 W
Power Dissipation
550 mW
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
13 ns
Thermal Resistance Junction-Ambient
292 °C/W
Thermal Resistance Junction-Ambient
318 °C/W
Thermal Resistance Junction-Case
87.5 °C/W
Thermal Resistance Junction-Case
125 °C/W
Turn Off Time (toff)
20 ns
Turn On Time (ton)
15 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 15V,500mA,550mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch | Box | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| LSSGP071.PDF | Device Datasheet |
| Material Composition:TO-78 | Material Composition |
| Package Detail Document:TO-78 | Package Detail Document |
| Process Change Notice:CP207 replaced by CP396V | Process Change Notice |
| Product EOL Notice:TO-78 CASE | Product EOL Notice |