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AEM

MD2905A

60V,600mA,575mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
2.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-78
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
30000 nA
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
100 — 300 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
75 x10³
Delay Time (td)
12 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
Fall Time (tf)
40 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
30 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
625 mW
Power Dissipation
1.8 W
Power Dissipation
2.5 W
Power Dissipation
575 mW
Rise Time (tr)
35 ns
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
100 ns
Thermal Resistance Junction-Ambient
280 °C/W
Thermal Resistance Junction-Ambient
304 °C/W
Thermal Resistance Junction-Case
70 °C/W
Thermal Resistance Junction-Case
97 °C/W
Turn Off Time (toff)
130 ns
Turn On Time (ton)
45 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued60V,600mA,575mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP General Purpose Amplifier/SwitchBox100PBFREE

Resources

ItemType
LSSGP071.PDFDevice Datasheet
Material Composition:TO-78Material Composition
Package Detail Document:TO-78Package Detail Document
Product EOL Notice:TO-78 CASEProduct EOL Notice

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