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AEM

MD7001

30V,600mA,600mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-78
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
70 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
30 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
650 mW
Power Dissipation
2.1 W
Power Dissipation
3.8 W
Power Dissipation
600 mW
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued30V,600mA,600mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP General Purpose Amplifier/SwitchBox100PBFREE

Resources

ItemType
LSSGP071.PDFDevice Datasheet
Material Composition:TO-78Material Composition
Package Detail Document:TO-78Package Detail Document
Product EOL Notice:TO-78 CASEProduct EOL Notice

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