MD7003B
40V,50mA,550mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP Low Noise Amplifier
Specifications
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
15 mV
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
TO-78
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain Matching (hFE1/hFE2)
0.85 — 1
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
600 mW
Power Dissipation
1.4 W
Power Dissipation
2 W
Power Dissipation
550 mW
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 40V,50mA,550mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP Low Noise Amplifier | Box | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| LSSGP071.PDF | Device Datasheet |
| Material Composition:TO-78 | Material Composition |
| Package Detail Document:TO-78 | Package Detail Document |
| Product EOL Notice:TO-78 CASE | Product EOL Notice |