MD8002
50V,30mA,575mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN Low Noise Amplifier
Specifications
Base-Emitter On Voltage Matching (|VBE1-VBE2|)
15 mV
Case Type
TO-78
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Emitter Breakdown Voltage (BVCEO)
50 V
Collector-Emitter Voltage (VCEO)
50 V
Continuous Collector Current
30 mA
Current Gain-Bandwidth Product (fT)
240 MHz
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
50 nA
HTS Code
8541.21.0075
Input Capacitance (Cib)
1.9 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
20 pF
Power Dissipation
625 mW
Power Dissipation
1.8 W
Power Dissipation
2.5 W
Power Dissipation
575 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient
280 °C/W
Thermal Resistance Junction-Ambient
300 °C/W
Thermal Resistance Junction-Case
70 °C/W
Thermal Resistance Junction-Case
97.2 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 50V,30mA,575mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN Low Noise Amplifier | Box | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| MD8001-8003.PDF | Device Datasheet |
| Material Composition:TO-78 | Material Composition |
| Package Detail Document:TO-78 | Package Detail Document |
| Product EOL Notice:TO-78 CASE | Product EOL Notice |