MD984
20V,200mA,575mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-78
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
30000 nA
Collector-Base Cutoff Current (ICBO)
25 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
20 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
20 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
625 mW
Power Dissipation
1.8 W
Power Dissipation
2.5 W
Power Dissipation
575 mW
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 20V,200mA,575mW Through-Hole Transistor-Small Signal (<=1A) Dual PNP General Purpose Amplifier/Switch | Box | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| LSSGP071.PDF | Device Datasheet |
| Material Composition:TO-78 | Material Composition |
| Package Detail Document:TO-78 | Package Detail Document |
| Product EOL Notice:TO-78 CASE | Product EOL Notice |