MJ11015
30A,120V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
5 V
Base-Emitter Saturation Voltage (VBE(SAT))
3.5 V
Case Type
TO-3
Collector-Base Voltage
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
120 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICER)
1000 µA
Collector-Emitter Cutoff Current (ICER)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
4000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Voltage (VCEO)
120 V
Continuous Base Current
1 A
Continuous Collector Current
30 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
200 x10³
DC Current Gain (hFE)
1000 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 200 °C
Power Dissipation
200 W
Storage Temperature (Tstg)
-55 — 200 °C
Thermal Resistance Junction-Case
0.87 K/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 30A,120V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| LSSGP085.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |