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AEM

MJ2955

60V,15A,115W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.5 V
Case Type
TO-3
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCER)
70 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
700 µA
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1100 mV
Collector-Emitter Voltage (VCEO)
60 V
Collector-Emitter Voltage (VCER)
70 V
Continuous Base Current
7 A
Continuous Collector Current
15 A
Current Gain-Bandwidth Product (fT)
2.5 MHz
DC Current Gain (hFE)
5 x10³
DC Current Gain (hFE)
20 — 70 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation
115 W
Second Breakdown Collector Current (Is/b)
2.87 A
Small Signal Current Gain (hfe)
15 — 120 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
1.52 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued60V,15A,115W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchSleeve20TINNo

Resources

ItemType
Analytical Test Report:Cap and AssemblyAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:LeadsAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
2N3055.PDFDevice Datasheet
Material Composition:TO-3Material Composition
Package Detail Document:TO-3Package Detail Document
Process Change Notice:MJ2955Process Change Notice
Product EOL Notice:Power transistors bare die andProduct EOL Notice
Product Reliability Data:TO-3 Package ReliabilityProduct Reliability Data

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