MJ420S
250V,100mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Base-Emitter On Voltage (VBE(ON))
1 V
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
275 V
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Voltage
275 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
5000 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Base Current
100 mA
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
15 MHz
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
25 — 250 x10³
DC Current Gain (hFE)
15 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 175 °C
Output Capacitance (Cob)
12 pF
Power Dissipation
2.5 W
Power Dissipation
800 mW
Storage Temperature (Tstg)
-65 — 175 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 250V,100mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP067.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |