MJE13003
400V,1.5A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
TO-126
Collector-Emitter Breakdown Voltage (BVCEO)
400 V
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
400 V
Collector-Emitter Voltage (VCEV)
700 V
Continuous Base Current
750 mA
Continuous Collector Current
1.5 A
Continuous Emitter Current
2.25 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
8 — 40 x10³
DC Current Gain (hFE)
5 — 25 x10³
Delay Time (td)
100 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
9 V
Fall Time (tf)
700 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
40 pF
Peak Base Current
1.5 A
Peak Collector Current
3 A
Peak Emitter Current
4.5 A
Power Dissipation
1.4 W
Power Dissipation
40 W
Rise Time (tr)
1000 ns
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
4000 ns
Thermal Resistance Junction-Ambient
89 °C/W
Thermal Resistance Junction-Case
3.12 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 400V,1.5A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| MJE13003.PDF | Device Datasheet |
| Material Composition:TO-126 | Material Composition |
| Package Detail Document:TO-126 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-126 Package Reliability | Product Reliability Data |