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AEM

MJE13005

400V,4A,2W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-220
Collector-Emitter Breakdown Voltage (BVCEO)
400 V
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
400 V
Collector-Emitter Voltage (VCEV)
700 V
Continuous Base Current
2 A
Continuous Collector Current
4 A
Continuous Emitter Current
6 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
8 — 40 x10³
DC Current Gain (hFE)
10 — 60 x10³
Delay Time (td)
100 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
9 V
Fall Time (tf)
900 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
130 pF
Peak Base Current
4 A
Peak Collector Current
8 A
Peak Emitter Current
12 A
Power Dissipation
75 W
Power Dissipation
2 W
Rise Time (tr)
700 ns
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
4000 ns
Thermal Resistance Junction-Ambient
62.5 °C/W
Thermal Resistance Junction-Case
1.67 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued400V,4A,2W Through-Hole Transistor-Bipolar Power (>1A) NPN High VoltageSleeve50TINNo
Discontinued400V,4A,2W Through-Hole Transistor-Bipolar Power (>1A) NPN High VoltageSleeve50TINNo

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