MJE13008
300V,12A,100W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-220
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Cutoff Current (ICEV)
1000 µA
Collector-Emitter Cutoff Current (ICEV)
5000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
300 V
Collector-Emitter Voltage (VCEV)
600 V
Continuous Base Current
6 A
Continuous Collector Current
12 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
6 — 30 x10³
DC Current Gain (hFE)
8 — 40 x10³
Delay Time (td)
60 ns
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
9 V
Fall Time (tf)
200 ns
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
180 pF
Peak Collector Current
24 A
Power Dissipation
100 W
Rise Time (tr)
450 ns
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
1300 ns
Thermal Resistance Junction-Case
1.25 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 300V,12A,100W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| MJE13008_13009.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |