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AEM

MJE172

80V,3A,1.5W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Case Type
TO-126
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1700 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
900 mV
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current
1 A
Continuous Collector Current
3 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
12 x10³
DC Current Gain (hFE)
50 — 250 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
50 pF
Peak Collector Current
6 A
Power Dissipation
15 W
Power Dissipation
1.5 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
83 °C/W
Thermal Resistance Junction-Case
8.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued80V,3A,1.5W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchSleeve50PBFREE

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