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AEM

MJE221

40V,4A,1.5W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.8 V
Case Type
TO-126
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
2500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current
1 A
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
10 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
40 — 150 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
50 pF
Peak Collector Current
8 A
Power Dissipation
15 W
Power Dissipation
1.5 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
83.4 °C/W
Thermal Resistance Junction-Case
8.34 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued40V,4A,1.5W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/SwitchSleeve50PBFREE

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