MJE340
300V,500mA,20.8W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Case Type
TO-126
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Voltage
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Voltage (VCEO)
300 V
Continuous Collector Current
500 mA
DC Current Gain (hFE)
30 — 240 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100000 nA
Emitter-Base Voltage
3 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
20.8 W
Storage Temperature (Tstg)
-65 — 150 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 300V,500mA,20.8W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| MJE340.PDF | Device Datasheet |
| Material Composition:TO-126 | Material Composition |
| Package Detail Document:TO-126 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-126 Package Reliability | Product Reliability Data |