MJE3439
350V,300mA,15W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Specifications
Base-Emitter On Voltage (VBE(ON))
0.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-126
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Voltage
450 V
Collector-Emitter Breakdown Voltage (BVCEO)
350 V
Collector-Emitter Cutoff Current (ICEO)
20 µA
Collector-Emitter Cutoff Current (I)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
350 V
Continuous Base Current
150 mA
Continuous Collector Current
300 mA
Current Gain-Bandwidth Product (fT)
15 MHz
DC Current Gain (hFE)
15 — 200 x10³
DC Current Gain (hFE)
30 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
20000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Power Dissipation
15 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
8.33 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued, Stock Only | 350V,300mA,15W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| MJE3439.PDF | Device Datasheet |
| Material Composition:TO-126 | Material Composition |
| Package Detail Document:TO-126 | Package Detail Document |
| Product Reliability Data:TO-126 Package Reliability | Product Reliability Data |