MJE701
4A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
Specifications
Base-Emitter On Voltage (VBE(ON))
3 V
Base-Emitter On Voltage (VBE(ON))
2.5 V
Case Type
TO-126
Collector-Base Cutoff Current (ICBO)
500000 nA
Collector-Base Cutoff Current (ICBO)
100000 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2800 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
100 mA
Continuous Collector Current
4 A
Current Gain-Bandwidth Product (fT)
1 MHz
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
750 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Power Dissipation
40 W
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Case
3.13 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 4A,60V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington | Sleeve | 50 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| MJE700_800_SERIES.PDF | Device Datasheet |
| Material Composition:TO-126 | Material Composition |
| Package Detail Document:TO-126 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-126 Package Reliability | Product Reliability Data |