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AEM

MJE710

40V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
0.95 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-126
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEO)
500 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current
500 mA
Continuous Collector Current
1.5 A
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
8 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
20 W
Power Dissipation
1.25 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
100 °C/W
Thermal Resistance Junction-Case
6.25 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued40V,1.5A,1.25W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchSleeve50PBFREE

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