MM4003
250V,500mA,600mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage
Specifications
Case Type
TO-39
Collector-Base Breakdown Voltage (BVCBO)
250 V
Collector-Base Cutoff Current (ICBO)
5000 nA
Collector-Base Voltage
250 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Saturation Voltage (VCE(SAT))
5000 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Collector Current
500 mA
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Voltage
4 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
20 pF
Power Dissipation
3 W
Power Dissipation
600 mW
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 250V,500mA,600mW Through-Hole Transistor-Small Signal (<=1A) PNP High Voltage | Box | 500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| MM4000-4003.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |