MPQ2369
15V,500mA,500mW Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-116
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
400 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
450 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4.5 V
Emitter-Base Cutoff Current (IEBO)
500 nA
Emitter-Base Voltage
4.5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
5 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
4 pF
Power Dissipation
1.5 W
Power Dissipation
500 mW
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
12 ns
Turn On Time (ton)
9 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 15V,500mA,500mW Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch | Sleeve | 25 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| MPQ2369.PDF | Device Datasheet |
| Material Composition:TO-116 | Material Composition |
| Package Detail Document:TO-116 | Package Detail Document |
| Process Change Notice:CP207 replaced by CP396V | Process Change Notice |
| Product EOL Notice:TO-116 CASE | Product EOL Notice |