MPQ2483
40V,50mA,500mW Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
0.7 V
Base-Emitter On Voltage (VBE(ON))
0.8 V
Case Type
TO-116
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
20 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-55 — 150 °C
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
6 pF
Power Dissipation
900 mW
Power Dissipation
825 mW
Power Dissipation
2.4 W
Power Dissipation
500 mW
Storage Temperature (Tstg)
-55 — 150 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 40V,50mA,500mW Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch | Sleeve | 25 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| LSSGP079.PDF | Device Datasheet |
| Material Composition:TO-116 | Material Composition |
| Package Detail Document:TO-116 | Package Detail Document |
| Product EOL Notice:TO-116 CASE | Product EOL Notice |