MPQ3725
40V,1A,1W Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 — 1 V
Case Type
TO-116
Collector-Base Cutoff Current (ICBO)
500 nA
Collector-Emitter Breakdown Voltage (BVCES)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
450 mV
Collector-Emitter Voltage (VCEO)
40 V
Collector-Emitter Voltage (VCES)
60 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
35 — 200 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Power Dissipation
2.5 W
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
60 ns
Turn On Time (ton)
35 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 40V,1A,1W Through-Hole Transistor-Quad NPN General Purpose Amplifier/Switch | Sleeve | 25 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| MPQ3725.PDF | Device Datasheet |
| Material Composition:TO-116 | Material Composition |
| Package Detail Document:TO-116 | Package Detail Document |
| Product EOL Notice:CP337V WAFER PROCESS | Product EOL Notice |